щом съм споменал транзистора в дъното или платката мисля ми е ясно какъв е.
NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
• Leading −20 V Trench for Low RDS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• Pb−Free Package is Available
Applications
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −20 V
Gate−to−Source Voltage VGS ±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C ID −2.4 A
TA = 85°C −1.7
t ≤ 10 s TA = 25°C −3.2
Power Dissipation
(Note 1)
Steady
State
TA = 25°C PD 0.73 W
t ≤ 10 s 1.25
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C ID −1.8 A
TA = 85°C −1.3
Power Dissipation
(Note 2)
TA = 25°C PD 0.42 W
Pulsed Drain Current tp = 10 s IDM −18 A
ESD Capability (Note 3) C = 100 pF,
RS = 1500
ESD 225 V
Operating Junction and Storage Temperature TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode) IS −2.4 A
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1) RJA 170 °C/W
Junction−to−Ambient − t < 10 s (Note 1) RJA 100
Junction−to−Ambient − Steady State (Note 2) RJA 300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
S
G
D
Device Package Shipping†
ORDERING INFORMATION
NTR4101PT1 SOT−23 3000/Tape & Reel
P−Channel MOSFET
SOT−23
CASE 318
STYLE 21
TR4 M
TR4 = Device Code
M = Date Code
= Pb−Free Package
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
1
Gate
2
1
3
2
Source
NTR4101PT1G
http://onsemi.com
SOT−23
Pb−Free
3000/Tape & Reel
V(BR)DSS RDS(ON) TYP ID MAX
−20 V
70 m @ −4.5 V
90 m @ −2.5 V
112 m @ −1.8 V
−3.2 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NTR4101P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 V, ID = −250 A)
V(BR)DSS −20 V
Zero Gate Voltage Drain Current (Note 4)
(VGS = 0 V, VDS = −16 V)
IDSS −1.0 A
Gate−to−Source Leakage Current
(VGS = ±8.0 V, VDS = 0 V)
IGSS ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(VGS = VDS, ID = −250 A)
VGS(th) −0.4 −0.72 −1.2 V
Drain−to−Source On−Resistance
(VGS = −4.5 V, ID = −1.6 A)
(VGS = −2.5 V, ID = −1.3 A)
(VGS = −1.8 V, ID = −0.9 A)
RDS(on)
70
90
112
85
120
210
m
Forward Transconductance (VDS = −5.0 V, ID = −2.3 A) gFS 7.5 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
(VGS = 0 V, f = 1 MHz, VDS = −10 V)
Ciss 675 pF
Output Capacitance Coss 100
Reverse Transfer Capacitance Crss 75
Total Gate Charge (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A) QG(tot) 7.5 8.5 nC
Gate−to−Source Gate Charge (VDS = −10 V, ID = −1.6 A) QGS 1.2 nC
Gate−to−Drain “Miller” Charge (VDS = −10 V, ID = −1.6 A) QGD 2.2 nC
Gate Resistance RG 6.5
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(VGS = −4.5 V, VDS = −10 V,
ID = −1.6 A, RG = 6.0 )
td(on) 7.5 ns
Rise Time tr 12.6
Turn−Off Delay Time td(off) 30.2
Fall Time tf 21.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (VGS = 0 V, IS = −2.4 A) VSD −0.82 −1.2 V
Reverse Recovery Time
(VGS = 0 V,
dISD/dt = 100 A/s, IS = −1.6 A)
trr 12.8 15 ns
Charge Time